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| (R) BAT46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metalto silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Repetitive Peak Forward Current* Surge non Repetitive Forward Current* Power Dissipation* Storage and Junction Temperature Range Maximum Temperature for Soldering during 10s at 4mm from Case Ta = 25 C tp 1s 0.5 tp = 10ms TI = 80C DO 35 (Glass) Value 100 150 350 750 150 - 65 to + 150 - 65 to + 125 230 Unit V mA mA mA mW C C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* * On infinite heatsink with 4mm lead length. Test Conditions Value 300 Unit C/W August 1999 Ed: 1A 1/4 BAT46 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25C Tj = 25C Tj = 25C Tj = 25C IR * Tj = 25C Tj = 60C Tj = 25C Tj = 60C Tj = 25C Tj = 60C Tj = 25C Tj = 60C VR = 75V VR = 50V Test Conditions Min. Typ. Max. Unit V 0.25 0.45 1 0.5 5 A V IF = 10A IF = 0.1mA IF = 10mA IF = 250mA VR = 1.5V VR = 10V 100 0.8 7.5 2 15 5 20 DYNAMIC CHARACTERISTICS Symbol C Tj = 25C Tj = 25C * Pulse test: tp 300s < 2%. Test Conditions VR = 0V VR = 1V Min. Typ. 10 6 Max. Unit pF f = 1Mhz 2/4 BAT46 Fig. 1-1: Forward voltage drop versus forward current (low level, typical values) Fig. 1-2: Forward voltage drop versus forward current (high level, typical values) IFM(mA) 20 18 16 14 12 10 8 6 4 2 0 0.0 0.1 IFM(A) 5E-1 Tj=125C Tj=25C Tj=125C 1E-1 Tj=25C VFM(V) 0.2 0.3 0.4 0.5 0.6 VFM(V) 1E-2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2: Leakage current versus reverse voltage applied (typical values) Fig. 3: Leakage current versus junction temperature (typical values) 1E+3 1E+2 1E+1 IR(A) Tj=125C IR(A) 1E+3 1E+2 Tj=75C VR=75V Tj=100C Tj=50C 1E+1 1E+0 VR(V) 1E+0 1E-1 Tj=25C Tj(C) 80 90 100 0 10 20 30 40 50 60 70 1E-1 0 25 50 75 100 125 Fig. 4: Junction capacitance versus reverse voltage applied (typical values) C(pF) 10 F=1MHz Tj=25C 5 2 VR(V) 1 10 100 1 3/4 BAT46 PACKAGE MECHANICAL DATA DO 35 Glass C A C OB / REF. A OD / OD / DIMENSIONS Millimeters Inches Min. 3.05 1.53 12.7 0.458 Max. 4.50 2.00 0.558 Min. 0.120 0.060 0.500 0.018 Max. 0.177 0.079 0.022 B C D Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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